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| MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features * Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection * High Accuracy Preset Voltage Regulation: + 0.75% * Four Voltage Regulation Options: - 4.20V, 4.35V, 4.40V, 4.50V * Programmable Charge Current: 15 mA to 500 mA * Selectable Preconditioning: - 10%, 20%, 40%, or Disable * Selectable End-of-Charge Control: - 5%, 7.5%, 10%, or 20% * Charge Status Output - Tri-State Output - MCP73831 - Open-Drain Output - MCP73832 * Automatic Power-Down * Thermal Regulation * Temperature Range: -40C to +85C * Packaging: - 8-Lead, 2 mm x 3 mm DFN - 5-Lead, SOT-23 Description: The MCP73831/2 devices are highly advanced linear charge management controllers for use in space-limited, cost-sensitive applications. The MCP73831/2 are available in an 8-Lead, 2 mm x 3 mm DFN package or a 5-Lead, SOT-23 package. Along with their small physical size, the low number of external components required make the MCP73831/2 ideally suited for portable applications. For applications charging from a USB port, the MCP73831/2 adhere to all the specifications governing the USB power bus. The MCP73831/2 employ a constant-current/constantvoltage charge algorithm with selectable preconditioning and charge termination. The constant voltage regulation is fixed with four available options: 4.20V, 4.35V, 4.40V or 4.50V, to accommodate new, emerging battery charging requirements. The constant current value is set with one external resistor. The MCP73831/ 2 devices limit the charge current based on die temperature during high power or high ambient conditions. This thermal regulation optimizes the charge cycle time while maintaining device reliability. Several options are available for the preconditioning threshold, preconditioning current value, charge termination value and automatic recharge threshold. The preconditioning value and charge termination value are set as a ratio, or percentage, of the programmed constant current value. Preconditioning can be disabled. Refer to Section 1.0 "Electrical Characteristics" for available options and the "Product Identification System" for standard options. The MCP73831/2 devices are fully specified over the ambient temperature range of -40C to +85C. Applications * * * * * * * Lithium-Ion/Lithium-Polymer Battery Chargers Personal Data Assistants Cellular Telephones Digital Cameras MP3 Players Bluetooth Headsets USB Chargers Package Types MCP73831/2 2x3 DFN* VDD 1 8 PROG EP 9 7 NC 6 VSS 5 STAT Typical Application 500 mA Li-Ion Battery Charger VIN 4.7 F 4V DD VBAT 3 4.7 F PROG 470 1 STAT VSS 2 5 2 k + Single Li-Ion - Cell MCP73831/2 SOT-23-5 STAT 1 VSS 2 VBAT 3 5 PROG 4 VDD VDD 2 VBAT 3 VBAT 4 * Includes Exposed Thermal Pad (EP); see Table 3-1. MCP73831 (c) 2008 Microchip Technology Inc. DS21984E-page 1 MCP73831/2 Functional Block Diagram VDD 6 mA DIRECTION CONTROL VBAT 6 mA G=0.001 PROG 0.5 mA + 43.6 k 361 k 89 k 111 k + TERMINATION + CHARGE 15 k STAT + 3.9 k VDD CA MCP73831 ONLY REFERENCE GENERATOR VREF(1.22V) PRECONDITION 182.3 k 7 k + 190 k VA 111 k + + + SHDN DIRECTION CONTROL UVLO 0.5 mA VBAT 477 k 255 k 100 k VSS DS21984E-page 2 (c) 2008 Microchip Technology Inc. MCP73831/2 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VDD...................................................................................7.0V All Inputs and Outputs w.r.t. VSS ............... -0.3 to (VDD+0.3)V Maximum Junction Temperature, TJ ............ Internally Limited Storage temperature .....................................-65C to +150C ESD protection on all pins: Human Body Model (1.5 k in Series with 100 pF)....... 4 kV Machine Model (200 pF, No Series Resistance) .............400V DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40C to +85C. Typical values are at +25C, VDD = [VREG (typical) + 1.0V] Parameters Supply Input Supply Voltage Supply Current VDD ISS 3.75 -- -- -- -- -- UVLO Start Threshold UVLO Stop Threshold UVLO Hysteresis Regulated Output Voltage VSTART VSTOP VHYS VREG 3.3 3.2 -- 4.168 4.317 4.367 4.466 -- 510 53 25 1 0.1 3.45 3.38 70 4.20 4.35 4.40 4.50 6 1500 200 50 5 2 3.6 3.5 -- 4.232 4.383 4.433 4.534 V A A A A A V V mV V V V V MCP7383X-2 MCP7383X-3 MCP7383X-4 MCP7383X-5 VDD = [VREG(typical)+1V] IOUT = 10 mA TA = -5C to +55C Line Regulation Load Regulation Supply Ripple Attenuation |(VBAT/ VBAT)/VDD| |VBAT/VBAT| PSRR -- -- -- -- -- Current Regulation (Fast Charge Constant-Current Mode) Fast Charge Current Regulation IREG 90 450 12.5 Note 1: Not production tested. Ensured by design. 100 505 14.5 110 550 16.5 mA mA mA PROG = 10 k PROG = 2.0 k, Note 1 PROG = 67 k TA = -5C to +55C 0.09 0.05 52 47 22 0.30 0.30 ---- -- %/V % dB dB dB VDD = [VREG(typical)+1V] to 6V, IOUT = 10 mA IOUT = 10 mA to 50 mA VDD = [VREG(typical)+1V] IOUT=10 mA, 10Hz to 1 kHz IOUT=10 mA, 10Hz to 10 kHz IOUT=10 mA, 10Hz to 1 MHz Charging Charge Complete, No Battery PROG Floating VDD < (VBAT - 50 mV) VDD < VSTOP VDD Low-to-High VDD High-to-Low Sym. Min. Typ. Max. Units Conditions Voltage Regulation (Constant-Voltage Mode) (c) 2008 Microchip Technology Inc. DS21984E-page 3 MCP73831/2 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typical) + 0.3V] to 6V, TA = -40C to +85C. Typical values are at +25C, VDD = [VREG (typical) + 1.0V] Parameters Sym. Min. Typ. Max. Units Conditions Preconditioning Current Regulation (Trickle Charge Constant-Current Mode) Precondition Current Ratio IPREG / IREG 7.5 15 30 -- Precondition Voltage Threshold Ratio Precondition Hysteresis Charge Termination Charge Termination Current Ratio ITERM / IREG 3.75 5.6 8.5 15 Automatic Recharge Recharge Voltage Threshold Ratio VRTH / VREG 91.5 94 RDSON IDISCHARGE -- -- -- -- -- Status Indicator - STAT Sink Current Low Output Voltage Source Current High Output Voltage Input Leakage Current PROG Input Charge Impedance Range Minimum Shutdown Impedance Automatic Power Down Automatic Power Down Entry Threshold Automatic Power Down Exit Threshold Thermal Shutdown Die Temperature Die Temperature Hysteresis Note 1: TSD TSDHYS -- -- 150 10 -- -- C C VPDENTER VPDEXIT VDD<(VBAT +20 mV) -- VDD<(VBAT +50 mV) VDD<(VBAT +150 mV) -- VDD<(VBAT +200 mV) 3.5V VBAT VREG VDD Falling 3.5V VBAT VREG VDD Rising RPROG RPROG 2 70 -- -- 67 200 k k ISINK VOL ISOURCE VOH ILK -- -- -- -- -- -- 0.4 -- VDD-0.4 0.03 25 1 35 VDD - 1 1 mA V mA V A ISOURCE = 4 mA (MCP73831) High-Impedance ISINK = 4 mA 94.0 96.5 350 0.15 0.25 0.15 -5.5 96.5 99 -- 2 2 2 -15 % % m A A A A VBAT High-to-Low VBAT High-to-Low VDD = 3.75V, TJ = 105C PROG Floating VDD Floating VDD < VSTOP Charge Complete 5 7.5 10 20 6.25 9.4 11.5 25 % % % % PROG = 2.0 k to 10 k PROG = 2.0 k to 10 k PROG = 2.0 k to 10 k PROG = 2.0 k to 10 k TA = -5C to +55C VPTH / VREG VPHYS 64 69 -- 10 20 40 100 66.5 71.5 110 12.5 25 50 -- 69 74 -- % % % % % % mV PROG = 2.0 k to 10 k PROG = 2.0 k to 10 k PROG = 2.0 k to 10 k No Preconditioning TA = -5C to +55C VBAT Low-to-High VBAT Low-to-High VBAT High-to-Low Pass Transistor ON-Resistance ON-Resistance Battery Discharge Current Output Reverse Leakage Current Not production tested. Ensured by design. DS21984E-page 4 (c) 2008 Microchip Technology Inc. MCP73831/2 AC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V, TA = -40C to +85C. Typical values are at +25C, VDD = [VREG (typical) + 1.0V] Parameters UVLO Start Delay Constant-Current Regulation Transition Time Out of Preconditioning Current Rise Time Out of Preconditioning Termination Comparator Filter Charge Comparator Filter Status Indicator Status Output turn-off Status Output turn-on tOFF tON -- -- -- -- 200 200 s s Sym. tSTART tDELAY tRISE tTERM tCHARGE Min. -- -- -- 0.4 0.4 Typ. -- -- -- 1.3 1.3 Max. 5 1 1 3.2 3.2 Units ms ms ms ms ms Conditions VDD Low-to-High VBAT < VPTH to VBAT > VPTH IOUT Rising to 90% of IREG Average IOUT Falling Average VBAT ISINK = 1 mA to 0 mA ISINK = 0 mA to 1 mA TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typical) + 0.3V] to 12V. Typical values are at +25C, VDD = [VREG (typical) + 1.0V] Parameters Temperature Ranges Specified Temperature Range Operating Temperature Range Storage Temperature Range Thermal Package Resistances 5-Lead, SOT-23 JA -- 230 -- C/W 4-Layer JC51-7 Standard Board, Natural Convection (Note 2) 4-Layer JC51-7 Standard Board, Natural Convection (Note 1) TA TJ TA -40 -40 -65 -- -- -- +85 +125 +150 C C C Sym. Min. Typ. Max. Units Conditions 8-Lead, 2 mm x 3 mm, DFN JA -- 76 -- C/W Note 1: 2: This represents the minimum copper condition on the PCB (Printed Circuit Board). With large copper area on the PCB, the SOT-23-5 thermal resistance ( JA ) can reach a typical value of 130C/W or better. (c) 2008 Microchip Technology Inc. DS21984E-page 5 MCP73831/2 NOTES: DS21984E-page 6 (c) 2008 Microchip Technology Inc. MCP73831/2 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25C, Constant-Voltage mode. 4.210 4.205 4.200 4.195 4.190 4.185 4.180 4.175 4.170 4.50 4.75 5.00 5.25 5.50 5.75 6.00 IOUT = 450 mA IOUT = 100 mA Battery Regulation Voltage (V) MCP73831-2 Charge Current (mA) IOUT = 10 mA 500 450 400 350 300 250 200 150 100 50 0 2 7 12 17 22 27 32 37 42 47 52 57 62 67 Programming Resistor (k) Supply Voltage (V) FIGURE 2-1: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). Battery Regulation Voltage (V) FIGURE 2-4: Charge Current (IOUT) vs. Programming Resistor (RPROG). 104 Charge Current (mA) 103 102 101 100 99 98 97 96 4.50 4.75 5.00 5.25 5.50 5.75 6.00 4.210 4.205 4.200 4.195 4.190 4.185 4.180 4.175 4.170 MCP73831-2 IOUT = 10 mA RPROG = 10 k IOUT = 100 mA IOUT = 450 mA 0 10 20 30 40 50 60 70 -40 -30 -20 -10 80 Ambient Temperature (C) Supply Voltage (V) FIGURE 2-2: Battery Regulation Voltage (VBAT) vs. Ambient Temperature (TA). 0.40 +85C -40C +25C FIGURE 2-5: Charge Current (IOUT) vs. Supply Voltage (VDD). 516 Charge Current (mA) 514 512 510 508 506 504 502 500 4.50 4.75 5.00 5.25 5.50 5.75 6.00 Output Leakage Current (A) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 RPROG = 2 k 0.00 3.00 3.20 3.40 3.60 3.80 4.00 4.20 Battery Regulation Voltage (V) Supply Voltage (V) FIGURE 2-3: Output Leakage Current (IDISCHARGE) vs. Battery Regulation Voltage (VBAT). FIGURE 2-6: Charge Current (IOUT) vs. Supply Voltage (VDD). (c) 2008 Microchip Technology Inc. DS21984E-page 7 MCP73831/2 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25C, Constant-Voltage mode. 104 Charge Current (mA) 102 101 100 99 98 97 96 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Charge Current (mA) 103 RPROG = 10 k 525 450 375 300 225 150 75 0 25 35 45 55 65 75 85 95 105 115 RPROG = 2 k 125 135 145 Ambient Temperature (C) Junction Temperature (C) FIGURE 2-7: Charge Current (IOUT) vs. Ambient Temperature (TA). 516 Charge Current (mA) FIGURE 2-10: Charge Current (IOUT) vs. Junction Temperature (TJ). 0 -10 Attenuation (dB) 514 512 510 508 506 504 502 500 -40 -30 -20 -10 0 10 20 30 40 50 RPROG = 2 k VAC = 100 mVp-p IOUT = 10 mA COUT = 4.7 F, X7R Ceramic -20 -30 -40 -50 -60 0.01 60 70 80 0.1 1 10 100 1000 Ambient Temperature (C) Frequency (kHz) FIGURE 2-8: Charge Current (IOUT) vs. Ambient Temperature (TA). 120 Charge Current (mA) 105 90 75 60 45 30 15 0 25 35 45 55 65 75 85 95 105 115 125 135 145 155 Junction Temperature (C) FIGURE 2-11: Power Supply Ripple Rejection (PSRR). 0 -10 Attenuation (dB) -20 -30 -40 -50 -60 0.01 RPROG = 10 k VAC = 100 mVp-p IOUT = 100 mA COUT = 4.7 F, X7R Ceramic 0.1 1 10 100 1000 Frequency (kHz) FIGURE 2-9: Charge Current (IOUT) vs. Junction Temperature (TJ). FIGURE 2-12: Power Supply Ripple Rejection (PSRR). DS21984E-page 8 (c) 2008 Microchip Technology Inc. 155 MCP73831/2 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise indicated, VDD = [VREG(typical) + 1V], IOUT = 10 mA and TA= +25C, Constant-Voltage mode. 14 Source Voltage (V) 0.10 0.05 Output Current (A) Output Ripple (V) 1.40 1.20 1.00 0.80 0.60 0.40 0.20 0.00 -0.20 0 20 COUT = 4.7 F, X7R Ceramic 0.10 0.05 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 180 200 Output Ripple (V) Charge Current (mA) Charge Current (mA) 12 10 8 6 4 2 0 -2 0 20 40 60 80 100 120 140 160 180 200 IOUT = 10 mA COUT = 4.7 F, X7R Ceramic 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 40 60 80 100 120 140 Time (s) Time (s) FIGURE 2-13: 14 Source Voltage (V) Line Transient Response. 0.10 0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 160 180 200 FIGURE 2-16: 6.0 Battery Voltage (V) Load Transient Response. 120 100 80 60 12 10 8 6 4 2 0 -2 0 20 40 60 80 100 120 140 IOUT = 100 mA COUT = 4.7 F, X7R Ceramic 0.05 Output Ripple (V) 5.0 4.0 3.0 2.0 1.0 0.0 0 20 40 60 80 100 120 140 160 180 MCP73831-2AC/IOT VDD = 5.2V RPROG = 10 k 160 40 20 0 Time (s) Time (minutes) FIGURE 2-14: Line Transient Response. FIGURE 2-17: Complete Charge Cycle (180 mAh Li-Ion Battery). 6.0 Battery Voltage (V) 600 500 400 300 200 MCP73831-2AC/IOT VDD = 5.2V RPROG = 2 k 0.35 Output Current (A) 0.04 0.02 0.00 -0.02 -0.04 -0.06 -0.08 COUT = 4.7 F, X7R Ceramic 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -0.05 0 20 40 60 80 100 120 140 160 180 200 Output Ripple (V) 5.0 4.0 3.0 2.0 1.0 0.0 0 30 60 90 120 150 180 210 240 -0.10 -0.12 100 0 Time (s) Time (minutes) FIGURE 2-15: Load Transient Response. FIGURE 2-18: Complete Charge Cycle (1000 mAh Li-Ion Battery). (c) 2008 Microchip Technology Inc. DS21984E-page 9 MCP73831/2 NOTES: DS21984E-page 10 (c) 2008 Microchip Technology Inc. MCP73831/2 3.0 PIN DESCRIPTION PIN FUNCTION TABLES SOT-23-5 4 -- 3 -- 1 2 -- 5 -- Symbol VDD VDD VBAT VBAT STAT VSS NC PROG EP Function Battery Management Input Supply Battery Management Input Supply Battery Charge Control Output Battery Charge Control Output Charge Status Output Battery Management 0V Reference No Connection Current Regulation Set and Charge Control Enable Exposed Thermal Pad (EP); must be connected to VSS. The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. DFN 1 2 3 4 5 6 7 8 9 3.1 Battery Management Input Supply (VDD) 3.4 Battery Management 0V Reference (VSS) A supply voltage of [VREG (typical) + 0.3V] to 6V is recommended. Bypass to VSS with a minimum of 4.7 F. Connect to negative terminal of battery and input supply. 3.2 Battery Charge Control Output (VBAT) 3.5 Current Regulation Set (PROG) Preconditioning, fast charge and termination currents are scaled by placing a resistor from PROG to VSS. The charge management controller can be disabled by allowing the PROG input to float. Connect to positive terminal of battery. Drain terminal of internal P-channel MOSFET pass transistor. Bypass to VSS with a minimum of 4.7 F to ensure loop stability when the battery is disconnected. 3.6 Exposed Thermal Pad (EP) 3.3 Charge Status Output (STAT) STAT is an output for connection to an LED for charge status indication. Alternatively, a pull-up resistor can be applied for interfacing to a host microcontroller. STAT is a tri-state logic output on the MCP73831 and an open-drain output on the MCP73832. There is an internal electrical connection between the Exposed Thermal Pad (EP) and the VSS pin; they must be connected to the same potential on the Printed Circuit Board (PCB). Vias are recommended to add from land area of EP to a copper layer on the other side of the PCB for better thermal performance. (c) 2008 Microchip Technology Inc. DS21984E-page 11 MCP73831/2 NOTES: DS21984E-page 12 (c) 2008 Microchip Technology Inc. MCP73831/2 4.0 DEVICE OVERVIEW The UVLO circuit places the device in Shutdown mode if the input supply falls to within +50 mV of the battery voltage. Again, the input supply must rise to a level 150 mV above the battery voltage before the MCP73831/2 become operational. The UVLO circuit is always active. Whenever the input supply is below the UVLO threshold or within +50 mV of the voltage at the VBAT pin, the MCP73831/2 are placed in a Shutdown mode. During any UVLO condition, the battery reverse discharge current will be less than 2 A. The MCP73831/2 are highly advanced linear charge management controllers. Figure 4-1 depicts the operational flow algorithm from charge initiation to completion and automatic recharge. SHUTDOWN MODE VDD < VUVLO VDD < VBAT or PROG > 200 k STAT = Hi-Z VBAT < VPTH PRECONDITIONING MODE Charge Current = IPREG STAT = LOW VBAT > VPTH FAST CHARGE MODE Charge Current = IREG STAT = LOW VBAT > VPTH VBAT < VRTH 4.2 Charge Qualification For a charge cycle to begin, all UVLO conditions must be met and a battery or output load must be present. A charge current programming resistor must be connected from PROG to VSS. If the PROG pin is open or floating, the MCP73831/2 are disabled and the battery reverse discharge current is less than 2 A. In this manner, the PROG pin acts as a charge enable and can be used as a manual shutdown. 4.3 Preconditioning VBAT = VREG CONSTANT VOLTAGE MODE Charge Voltage = VREG STAT = LOW IBAT < ITERM CHARGE COMPLETE MODE No Charge Current STAT = HIGH (MCP73831) STAT = Hi-Z (MCP73832) If the voltage at the VBAT pin is less than the preconditioning threshold, the MCP73831/2 enter a preconditioning or Trickle Charge mode. The preconditioning threshold is factory set. Refer to Section 1.0 "Electrical Characteristics" for preconditioning threshold options and the Product Identification System for standard options. In this mode, the MCP73831/2 supply a percentage of the charge current (established with the value of the resistor connected to the PROG pin) to the battery. The percentage or ratio of the current is factory set. Refer to Section 1.0 "Electrical Characteristics" for preconditioning current options and the "Product Identification System" for standard options. When the voltage at the VBAT pin rises above the preconditioning threshold, the MCP73831/2 enter the Constant-Current or Fast Charge mode. FIGURE 4-1: Flowchart. 4.1 Undervoltage Lockout (UVLO) An internal UVLO circuit monitors the input voltage and keeps the charger in Shutdown mode until the input supply rises above the UVLO threshold. The UVLO circuitry has a built in hysteresis of 100 mV. In the event a battery is present when the input power is applied, the input supply must rise 150 mV above the battery voltage before the MCP73831/2 becomes operational. 4.4 Fast Charge Constant-Current Mode During the Constant-Current mode, the programmed charge current is supplied to the battery or load. The charge current is established using a single resistor from PROG to VSS. Constant-Current mode is maintained until the voltage at the VBAT pin reaches the regulation voltage, VREG. (c) 2008 Microchip Technology Inc. DS21984E-page 13 MCP73831/2 4.5 Constant-Voltage Mode 4.8 Thermal Regulation When the voltage at the VBAT pin reaches the regulation voltage, VREG, constant voltage regulation begins. The regulation voltage is factory set to 4.2V, 4.35V, 4.40V, or 4.50V with a tolerance of 0.75%. The MCP73831/2 limit the charge current based on the die temperature. The thermal regulation optimizes the charge cycle time while maintaining device reliability. Figure 4-2 depicts the thermal regulation for the MCP73831/2. 525 Charge Current (mA) 4.6 Charge Termination 450 375 300 225 150 75 0 25 35 45 55 65 75 85 95 105 115 125 135 145 155 RPROG = 2 k The charge cycle is terminated when, during ConstantVoltage mode, the average charge current diminishes below a percentage of the programmed charge current (established with the value of the resistor connected to the PROG pin). A 1 ms filter time on the termination comparator ensures that transient load conditions do not result in premature charge cycle termination. The percentage or ratio of the current is factory set. Refer to Section 1.0 "Electrical Characteristics" for charge termination current options and the "Product Identification System" for standard options. The charge current is latched off and the MCP73831/2 enter a Charge Complete mode. Junction Temperature (C) FIGURE 4-2: Thermal Regulation. 4.7 Automatic Recharge 4.9 Thermal Shutdown The MCP73831/2 continuously monitor the voltage at the VBAT pin in the Charge Complete mode. If the voltage drops below the recharge threshold, another charge cycle begins and current is once again supplied to the battery or load. The recharge threshold is factory set. Refer to Section 1.0 "Electrical Characteristics" for recharge threshold options and the "Product Identification System" for standard options. The MCP73831/2 suspend charge if the die temperature exceeds 150C. Charging will resume when the die temperature has cooled by approximately 10C. DS21984E-page 14 (c) 2008 Microchip Technology Inc. MCP73831/2 5.0 5.1 5.1.1 DETAILED DESCRIPTION Analog Circuitry BATTERY MANAGEMENT INPUT SUPPLY (VDD) 5.2 5.2.1 Digital Circuitry STATUS INDICATOR (STAT) The VDD input is the input supply to the MCP73831/2. The MCP73831/2 automatically enter a Power-Down mode if the voltage on the VDD input falls below the UVLO voltage (VSTOP). This feature prevents draining the battery pack when the VDD supply is not present. The charge status output of the MCP73831 has three different states: High (H), Low (L), and High-Impedance (Hi-Z). The charge status output of the MCP73832 is open-drain, and, as such, has two different states: Low (L), and High-Impedance (Hi-Z). The charge charge status output can be used to illuminate 1, 2, or tri-color LEDs. Optionally, the charge status output can be used as an interface to a host microcontroller. Table 5-1 summarize the state of the status output during a charge cycle.. 5.1.2 CURRENT REGULATION SET (PROG) Fast charge current regulation can be scaled by placing a programming resistor (RPROG) from the PROG input to VSS. The program resistor and the charge current are calculated using the following equation: 1000V I REG = ---------------R PROG Where: RPROG IREG = = kOhms milliampere TABLE 5-1: STATUS OUTPUT STAT1 MCP73831 MCP73832 Hi-Z Hi-Z L L L H Hi-Z Hi-Z L L L Hi-Z Charge Cycle State Shutdown No Battery Present Preconditioning Constant-Current Fast Charge Constant Voltage Charge Complete - Standby The preconditioning trickle charge current and the charge termination current are ratiometric to the fast charge current based on the selected device options. 5.2.2 DEVICE DISABLE (PROG) 5.1.3 BATTERY CHARGE CONTROL OUTPUT (VBAT) The battery charge control output is the drain terminal of an internal P-channel MOSFET. The MCP73831/2 provide constant current and voltage regulation to the battery pack by controlling this MOSFET in the linear region. The battery charge control output should be connected to the positive terminal of the battery pack. The current regulation set input pin (PROG) can be used to terminate a charge at any time during the charge cycle, as well as to initiate a charge cycle or initiate a recharge cycle. Placing a programming resistor from the PROG input to VSS enables the device. Allowing the PROG input to float or by applying a logic-high input signal, disables the device and terminates a charge cycle. When disabled, the device's supply current is reduced to 25 A, typically. (c) 2008 Microchip Technology Inc. DS21984E-page 15 MCP73831/2 NOTES: DS21984E-page 16 (c) 2008 Microchip Technology Inc. MCP73831/2 6.0 APPLICATIONS The MCP73831/2 are designed to operate in conjunction with a host microcontroller or in a stand-alone application. The MCP73831/2 provide the preferred charge algorithm for Lithium-Ion and Lithium-Polymer cells constant current followed by constant voltage. Figure 6-1 depicts a typical stand-alone application circuit, while Figures 6-2 and 6-3 depict the accompanying charge profile. Li-Ion Battery Charger 4 CIN RLED STAT REGULATED WALL CUBE LED 1 VSS MCP73831 2 PROG 5 RPROG VDD VBAT 3 COUT + Single Li-Ion - Cell FIGURE 6-1: 6.0 Battery Voltage (V) 5.0 4.0 3.0 2.0 1.0 0.0 0 20 40 60 Typical Application Circuit. 120 Charge Current (mA) Battery Voltage (V) 100 80 60 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 30 60 90 120 150 180 210 240 MCP73831-2AC/IOT VDD = 5.2V RPROG = 2 k 600 Charge Current (mA) 500 400 300 200 100 0 MCP73831-2AC/IOT VDD = 5.2V RPROG = 10 k 40 20 0 120 140 160 180 80 Time (minutes) 100 Time (minutes) FIGURE 6-2: Typical Charge Profile (180 mAh Battery). FIGURE 6-3: Typical Charge Profile in Thermal Regulation (1000 mAh Battery). 6.1 Application Circuit Design 6.1.1.1 Current Programming Resistor (RPROG) Due to the low efficiency of linear charging, the most important factors are thermal design and cost, which are a direct function of the input voltage, output current and thermal impedance between the battery charger and the ambient cooling air. The worst-case situation is when the device has transitioned from the Preconditioning mode to the Constant-Current mode. In this situation, the battery charger has to dissipate the maximum power. A trade-off must be made between the charge current, cost and thermal requirements of the charger. The preferred fast charge current for Lithium-Ion cells is at the 1C rate, with an absolute maximum current at the 2C rate. For example, a 500 mAh battery pack has a preferred fast charge current of 500 mA. Charging at this rate provides the shortest charge cycle times without degradation to the battery pack performance or life. 6.1.1 COMPONENT SELECTION Selection of the external components in Figure 6-1 is crucial to the integrity and reliability of the charging system. The following discussion is intended as a guide for the component selection process. (c) 2008 Microchip Technology Inc. DS21984E-page 17 MCP73831/2 6.1.1.2 Thermal Considerations 6.1.1.5 Charge Inhibit The worst-case power dissipation in the battery charger occurs when the input voltage is at the maximum and the device has transitioned from the Preconditioning mode to the Constant-Current mode. In this case, the power dissipation is: PowerDissipation = ( V DDMAX -V PTHMIN )xI REGMAX The current regulation set input pin (PROG) can be used to terminate a charge at any time during the charge cycle, as well as to initiate a charge cycle or initiate a recharge cycle. Placing a programming resistor from the PROG input to VSS enables the device. Allowing the PROG input to float or by applying a logic-high input signal, disables the device and terminates a charge cycle. When disabled, the device's supply current is reduced to 25 A, typically. Where: VDDMAX IREGMAX VPTHMIN = = = the maximum input voltage the maximum fast charge current the minimum transition threshold voltage 6.1.1.6 Charge Status Interface Power dissipation with a 5V, 10% input voltage source is: PowerDissipation = ( 5.5V - 2.7V ) x 550mA = 1.54W A status output provides information on the state of charge. The output can be used to illuminate external LEDs or interface to a host microcontroller. Refer to Table 5-1 for a summary of the state of the status output during a charge cycle. 6.2 PCB Layout Issues This power dissipation with the battery charger in the SOT-23-5 package will cause thermal regulation to be entered as depicted in Figure 6-3. Alternatively, the 2mm x 3mm DFN package could be utilized to reduce charge cycle times. For optimum voltage regulation, place the battery pack as close as possible to the device's VBAT and VSS pins. This is recommended to minimize voltage drops along the high current-carrying PCB traces. If the PCB layout is used as a heatsink, adding many vias in the heatsink pad can help conduct more heat to the backplane of the PCB, thus reducing the maximum junction temperature. Figures 6-4 and 6-5 depict a typical layout with PCB heatsinking. RLED LED VSS RPROG 6.1.1.3 External Capacitors The MCP73831/2 are stable with or without a battery load. In order to maintain good AC stability in the Constant-Voltage mode, a minimum capacitance of 4.7 F is recommended to bypass the VBAT pin to VSS. This capacitance provides compensation when there is no battery load. In addition, the battery and interconnections appear inductive at high frequencies. These elements are in the control feedback loop during Constant-Voltage mode. Therefore, the bypass capacitance may be necessary to compensate for the inductive nature of the battery pack. Virtually any good quality output filter capacitor can be used, independent of the capacitor's minimum Effective Series Resistance (ESR) value. The actual value of the capacitor (and its associated ESR) depends on the output load current. A 4.7 F ceramic, tantalum or aluminum electrolytic capacitor at the output is usually sufficient to ensure stability for output currents up to a 500 mA. VBAT COUT MCP73831 C IN VDD FIGURE 6-4: Typical Layout (Top). VSS 6.1.1.4 Reverse-Blocking Protection VBAT VDD The MCP73831/2 provide protection from a faulted or shorted input. Without the protection, a faulted or shorted input would discharge the battery pack through the body diode of the internal pass transistor. FIGURE 6-5: Typical Layout (Bottom). DS21984E-page 18 (c) 2008 Microchip Technology Inc. MCP73831/2 7.0 7.1 PACKAGING INFORMATION Package Marking Information 8-Lead DFN (2 mm x 3 mm) Device MCP73831T-2ACI/MC MCP73831T-2ATI/MC MCP73831T-2DCI/MC MCP73831T-3ACI/MC MCP73831T-4ADI/MC MCP73831T-5ACI/MC MCP73832T-2ACI/MC MCP73832T-2ATI/MC MCP73832T-2DCI/MC MCP73832T-3ACI/MC MCP73832T-4ADI/MC MCP73832T-5ACI/MC Code AAE AAF AAG AAH AAJ AAK AAL AAM AAP AAQ AAR AAS Example: XXX YWW NN AAE 739 25 Note: Applies to 8-Lead DFN 5-Lead SOT-23 Device Code KDNN KENN KFNN KGNN KHNN KJNN KKNN KLNN KMNN KPNN KQNN KRNN LUNN Example: XXNN MCP73831T-2ACI/OT MCP73831T-2ATI/OT MCP73831T-2DCI/OT MCP73831T-3ACI/OT MCP73831T-4ADI/OT MCP73831T-5ACI/OT MCP73832T-2ACI/OT MCP73832T-2ATI/OT MCP73832T-2DCI/OT MCP73832T-3ACI/OT MCP73832T-4ADI/OT MCP73832T-5ACI/OT MCP73832T-2DFI/OT KD25 Note: Applies to 5-Lead SOT-23 Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. (c) 2008 Microchip Technology Inc. DS21984E-page 19 MCP73831/2 /HDG 3ODVWLF 'XDO )ODW 1R /HDG 3DFNDJH 0& [[ PP %RG\ >')1@ 1RWH )RU WKH PRVW FXUUHQW SDFNDJH GUDZLQJV SOHDVH VHH WKH 0LFURFKLS 3DFNDJLQJ 6SHFLILFDWLRQ ORFDWHG DW KWWSZZZPLFURFKLSFRPSDFNDJLQJ D N L e N b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page 20 (c) 2008 Microchip Technology Inc. MCP73831/2 /HDG 3ODVWLF 'XDO )ODW 1R /HDG 3DFNDJH 0& [[ PP %RG\ >')1@ 1RWH )RU WKH PRVW FXUUHQW SDFNDJH GUDZLQJV SOHDVH VHH WKH 0LFURFKLS 3DFNDJLQJ 6SHFLILFDWLRQ ORFDWHG DW KWWSZZZPLFURFKLSFRPSDFNDJLQJ (c) 2008 Microchip Technology Inc. DS21984E-page 21 MCP73831/2 /HDG 3ODVWLF 6PDOO 2XWOLQH 7UDQVLVWRU 27 >627@ 1RWH )RU WKH PRVW FXUUHQW SDFNDJH GUDZLQJV SOHDVH VHH WKH 0LFURFKLS 3DFNDJLQJ 6SHFLILFDWLRQ ORFDWHG DW KWWSZZZPLFURFKLSFRPSDFNDJLQJ b N E E1 1 e 2 3 e1 D A A2 c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page 22 (c) 2008 Microchip Technology Inc. MCP73831/2 APPENDIX A: REVISION HISTORY Revision E (September 2008) The following is the list of modifications: 1. 2. Package Types: Changed DFN pinout diagram. 1.0 "Electrical Characteristics": Changed "Charge Impedance Range from 20 k to 67 k. 1.0 "Electrical Characteristics": Misc. Formatting changes. Section 2.0 "Typical Performance Curves": Updated Figure 2-4. Section 3.0 "Pin Description": Added Exposed Pad pin to table and added Section 3.6 "Exposed Thermal Pad (EP)". Updated Appendix A: "Revision History" Added Land Patttern Package Outline Drawing for 2x3 DFN package. Pagination fixes throughout document per Marcom Standards. 3. 4. 5. 6. 7. 8. Revision D (April 2008) The following is the list of modifications: 1. Changed Charge Termination Current Ratio to 8.5% minimum and 11.5% maximum. Revision C (October 2007) The following is the list of modifications: 1. 2. 3. Numerous edits throughout document. Added note to Temperature Specifications table. Updated Figure 2-4. Revision B (March 2006) The following is the list of modifications: 1. Added MCP73832 through document. Revision A (November 2005) * Original Release of this Document. (c) 2008 Microchip Technology Inc. DS21984E-page 19 MCP73831/2 NOTES: DS21984E-page 20 (c) 2008 Microchip Technology Inc. MCP73831/2 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X VREG XX X /XX Examples: * a) MCP73831-2ACI/OT: 4.20V VREG, Options AC, 5LD SOT23 Pkg MCP73831T-2ACI/OT: Tape and Reel, 4.20V VREG, Options AC, 5LD SOT23 Pkg MCP73832-2ACI/MC: 4.20V VREG, Options AC, 8LD DFN Package MCP73832T-2ACI/MC: Tape and Reel, 4.20V VREG, Options AC, 8LD DFN Package MCP73831-2ATI/OT: 4.20V VREG, Options AT, 5LD SOT23 Pkg MCP73831T-2ATI/OT: Tape and Reel, 4.20V VREG, Options AT, 5LD SOT23 Pkg MCP73832-2ATI/MC: 4.20V VREG, Options AT, 8LD DFN Package MCP73832T-2ATI/MC: Tape and Reel, 4.20V VREG, Options AT, 8LD DFN Package MCP73831-2DCI/OT: 4.20V VREG, Options DC, 5LD SOT23 Pkg MCP73831T-2DCI/OT: Tape and Reel, 4.20V VREG, Options DC, 5LD SOT23 Pkg MCP73832-2DCI/MC: 4.20V VREG, Options DC, 8LD DFN Package MCP73832T-2DCI/MC: Tape and Reel, 4.20V VREG, Options DC, 8LD DFN Package MCP73831-3ACI/OT: 4.35V VREG, Options AC, 5LD SOT23 Pkg MCP73831T-3ACI/OT: Tape and Reel, 4.35V VREG, Options AC, 5LD SOT23 Pkg MCP73832-3ACI/MC: 4.35V VREG, Options AC, 8LD DFN Package MCP73832T-3ACI/MC: Tape and Reel, 4.35V VREG, Options AC, 8LD DFN Package MCP73831-4ADI/OT: 4.40V VREG, Options AD, 5LD SOT23 Pkg MCP73831T-4ADI/OT: Tape and Reel, 4.40V VREG, Options AD, 5LD SOT23 Pkg MCP73832-4ADI/MC: 4.40V VREG, Options AD, 8LD DFN Package MCP73832T-4ADI/MC: Tape and Reel, 4.40V VREG, Options AD, 8LD DFN Package MCP73831-5ACI/OT: 4.50V VREG, Options AC, 5LD SOT23 Pkg MCP73831T-5ACI/OT: Tape and Reel, 4.50V VREG, Options AC, 5LD SOT23 Pkg MCP73832-5ACI/MC: 4.50V VREG, Options AC, 8LD DFN Package MCP73832T-5ACI/MC: Tape and Reel, 4.50V VREG, Options AC, 8LD DFN Package Options Temperature Package Range Single-Cell Charge Controller Single-Cell Charge Controller (Tape and Reel) Single-Cell Charge Controller Single-Cell Charge Controller (Tape and Reel) b) c) Device: MCP73831: MCP73831T: MCP73832 MCP73832T: d) a) b) c) d) Regulation Voltage: Code 2 3 4 5 = = = = VREG 4.20V 4.35V 4.40V 4.50V IPREG/IREG 10 10 10 100 VPTH/VREG 66.5 66.5 71.5 x ITERM/IREG 7.5 7.5 20 7.5 VRTH/VREG 96.5 94 94 96.5 a) b) Options: * Code AC AD AT DC c) d) a) b) * Consult Factory for Alternative Device Options Temperature Range: Package: I = -40C to +85C (Industrial) c) d) MC OT = Dual-Flat, No-Lead (2x3 mm body), 8-Lead = Small Outline Transistor (SOT23), 5-Lead a) b) c) d) a) b) c) d) * Consult Factory for Alternate Device Options (c) 2008 Microchip Technology Inc. DS21984E-page 21 MCP73831/2 NOTES: DS21984E-page 22 (c) 2008 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." * * * Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, rfPIC, SmartShunt and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM, PICDEM.net, PICtail, PIC32 logo, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total Endurance, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2008, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. (c) 2008 Microchip Technology Inc. DS21984E-page 23 WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 ASIA/PACIFIC Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 ASIA/PACIFIC India - Bangalore Tel: 91-80-4182-8400 Fax: 91-80-4182-8422 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 Japan - Yokohama Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-572-9526 Fax: 886-3-572-6459 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 EUROPE Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820 01/02/08 DS21984E-page 24 (c) 2008 Microchip Technology Inc. |
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